| Nomor bagian : | 1N8028-GA |
|---|---|
| Pabrikan / Merek : | GeneSiC Semiconductor |
| Deskripsi : | DIODE SCHOTTKY 1.2KV 9.4A TO257 |
| Status RoHs : | Berisi timbal / RoHS tidak patuh |
| Jumlah yang tersedia | 211 pcs |
| Lembar data | 1N8028-GA.pdf |
| Tegangan - Puncak terbalik (Max) | Silicon Carbide Schottky |
| Tegangan - Forward (Vf) (Max) @ Jika | 9.4A (DC) |
| Tegangan - Breakdown | TO-257 |
| Seri | - |
| Status RoHS | Tube |
| Sebaliknya Pemulihan Waktu (trr) | No Recovery Time > 500mA (Io) |
| Resistance @ Jika, F | 884pF @ 1V, 1MHz |
| Polarisasi | TO-257-3 |
| Nama lain | 1242-1115 1N8028GA |
| Suhu Operasional - Junction | 0ns |
| mount Jenis | Through Hole |
| Tingkat Sensitivitas Kelembaban (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 18 Weeks |
| Nomor Bagian Produsen | 1N8028-GA |
| Deskripsi yang Diperluas | Diode Silicon Carbide Schottky 1200V (1.2kV) 9.4A (DC) Through Hole TO-257 |
| Konfigurasi diode | 20µA @ 1200V |
| Deskripsi | DIODE SCHOTTKY 1.2KV 9.4A TO257 |
| Saat ini - Reverse Kebocoran @ Vr | 1.6V @ 10A |
| Saat ini - rata Rectified (Io) (per Diode) | 1200V (1.2kV) |
| Kapasitansi @ Vr, F | -55°C ~ 250°C |
GeneSiC Semiconductor
