Nomor bagian : |
AOI7S65 |
Pabrikan / Merek : |
Alpha and Omega Semiconductor, Inc. |
Deskripsi : |
MOSFET N-CH 650V 7A TO251A |
Status RoHs : |
Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia |
41434 pcs |
Lembar data |
1.AOI7S65.pdf2.AOI7S65.pdf |
Vgs (th) (Max) @ Id |
4V @ 250µA |
Vgs (Max) |
±30V |
Teknologi |
MOSFET (Metal Oxide) |
Paket Perangkat pemasok |
TO-251A |
Seri |
aMOS™ |
Rds Pada (Max) @ Id, Vgs |
650 mOhm @ 3.5A, 10V |
Power Disipasi (Max) |
89W (Tc) |
Pengemasan |
Tube |
Paket / Case |
TO-251-3 Stub Leads, IPak |
Suhu Operasional |
-55°C ~ 150°C (TJ) |
mount Jenis |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Status Gratis Memimpin / Status RoHS |
Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS |
434pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
9.2nC @ 10V |
FET Jenis |
N-Channel |
Fitur FET |
- |
Drive Voltage (Max Rds On, Min RDS Aktif) |
10V |
Tiriskan untuk Sumber Tegangan (Vdss) |
650V |
Detil Deskripsi |
N-Channel 650V 7A (Tc) 89W (Tc) Through Hole TO-251A |
Current - Continuous Drain (Id) @ 25 ° C |
7A (Tc) |