Nomor bagian : | APTM120U10DAG |
---|---|
Pabrikan / Merek : | Microsemi |
Deskripsi : | MOSFET N-CH 1200V 116A SP6 |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 4483 pcs |
Lembar data | 1.APTM120U10DAG.pdf2.APTM120U10DAG.pdf |
Vgs (th) (Max) @ Id | 5V @ 20mA |
Vgs (Max) | ±30V |
Teknologi | MOSFET (Metal Oxide) |
Paket Perangkat pemasok | SP6 |
Seri | - |
Rds Pada (Max) @ Id, Vgs | 120 mOhm @ 58A, 10V |
Power Disipasi (Max) | 3290W (Tc) |
Pengemasan | Bulk |
Paket / Case | SP6 |
Suhu Operasional | -40°C ~ 150°C (TJ) |
mount Jenis | Chassis Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 28900pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 1100nC @ 10V |
FET Jenis | N-Channel |
Fitur FET | - |
Drive Voltage (Max Rds On, Min RDS Aktif) | 10V |
Tiriskan untuk Sumber Tegangan (Vdss) | 1200V |
Detil Deskripsi | N-Channel 1200V 160A (Tc) 3290W (Tc) Chassis Mount SP6 |
Current - Continuous Drain (Id) @ 25 ° C | 160A (Tc) |