| Nomor bagian : |
BSM180D12P2C101 |
| Pabrikan / Merek : |
LAPIS Semiconductor |
| Deskripsi : |
MOSFET 2N-CH 1200V 180A MODULE |
| Status RoHs : |
Memimpin bebas / RoHS Compliant |
| Jumlah yang tersedia |
87 pcs |
| Lembar data |
1.BSM180D12P2C101.pdf2.BSM180D12P2C101.pdf3.BSM180D12P2C101.pdf |
| Vgs (th) (Max) @ Id |
4V @ 35.2mA |
| Paket Perangkat pemasok |
Module |
| Seri |
- |
| Rds Pada (Max) @ Id, Vgs |
- |
| Listrik - Max |
1130W |
| Pengemasan |
Bulk |
| Paket / Case |
Module |
| Suhu Operasional |
-40°C ~ 150°C (TJ) |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Manufacturer Standard Lead Time |
32 Weeks |
| Status Gratis Memimpin / Status RoHS |
Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS |
23000pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
- |
| FET Jenis |
2 N-Channel (Half Bridge) |
| Fitur FET |
Silicon Carbide (SiC) |
| Tiriskan untuk Sumber Tegangan (Vdss) |
1200V (1.2kV) |
| Detil Deskripsi |
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 204A (Tc) 1130W Module |
| Current - Continuous Drain (Id) @ 25 ° C |
204A (Tc) |
LAPIS Semiconductor
