Nomor bagian : | BUK9E4R9-60E,127 |
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Pabrikan / Merek : | NXP Semiconductors / Freescale |
Deskripsi : | MOSFET N-CH 60V 100A I2PAK |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 4946 pcs |
Lembar data | |
Vgs (th) (Max) @ Id | 2.1V @ 1mA |
Vgs (Max) | ±10V |
Teknologi | MOSFET (Metal Oxide) |
Paket Perangkat pemasok | I2PAK |
Seri | TrenchMOS™ |
Rds Pada (Max) @ Id, Vgs | 4.5 mOhm @ 25A, 10V |
Power Disipasi (Max) | 234W (Tc) |
Pengemasan | Tube |
Paket / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Nama lain | 568-9876-5 934066657127 BUK9E4R960E127 |
Suhu Operasional | -55°C ~ 175°C (TJ) |
mount Jenis | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 9710pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 5V |
FET Jenis | N-Channel |
Fitur FET | - |
Drive Voltage (Max Rds On, Min RDS Aktif) | 5V, 10V |
Tiriskan untuk Sumber Tegangan (Vdss) | 60V |
Detil Deskripsi | N-Channel 60V 100A (Tc) 234W (Tc) Through Hole I2PAK |
Current - Continuous Drain (Id) @ 25 ° C | 100A (Tc) |