Nomor bagian : |
DMN1019USN-13 |
Pabrikan / Merek : |
Diodes Incorporated |
Deskripsi : |
MOSFET N-CH 12V 9.3A SC59 |
Status RoHs : |
Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia |
322015 pcs |
Lembar data |
DMN1019USN-13.pdf |
Vgs (th) (Max) @ Id |
800mV @ 250µA |
Vgs (Max) |
±8V |
Teknologi |
MOSFET (Metal Oxide) |
Paket Perangkat pemasok |
SC-59 |
Seri |
- |
Rds Pada (Max) @ Id, Vgs |
10 mOhm @ 9.7A, 4.5V |
Power Disipasi (Max) |
680mW (Ta) |
Pengemasan |
Tape & Reel (TR) |
Paket / Case |
TO-236-3, SC-59, SOT-23-3 |
Nama lain |
DMN1019USN-13DITR |
Suhu Operasional |
-55°C ~ 150°C (TJ) |
mount Jenis |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Manufacturer Standard Lead Time |
32 Weeks |
Status Gratis Memimpin / Status RoHS |
Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS |
2426pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
50.6nC @ 8V |
FET Jenis |
N-Channel |
Fitur FET |
- |
Drive Voltage (Max Rds On, Min RDS Aktif) |
1.2V, 2.5V |
Tiriskan untuk Sumber Tegangan (Vdss) |
12V |
Detil Deskripsi |
N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount SC-59 |
Current - Continuous Drain (Id) @ 25 ° C |
9.3A (Ta) |