Nomor bagian : | EPC2012CENGR |
---|---|
Pabrikan / Merek : | EPC |
Deskripsi : | TRANS GAN 200V 5A BUMPED DIE |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 30059 pcs |
Lembar data | EPC2012CENGR.pdf |
Tegangan - Uji | 100pF @ 100V |
Tegangan - Breakdown | Die Outline (4-Solder Bar) |
Vgs (th) (Max) @ Id | 100 mOhm @ 3A, 5V |
Teknologi | GaNFET (Gallium Nitride) |
Seri | eGaN® |
Status RoHS | Tape & Reel (TR) |
Rds Pada (Max) @ Id, Vgs | 5A (Ta) |
Polarisasi | Die |
Nama lain | 917-EPC2012CENGRTR |
Suhu Operasional | -40°C ~ 150°C (TJ) |
mount Jenis | Surface Mount |
Tingkat Sensitivitas Kelembaban (MSL) | 1 (Unlimited) |
Nomor Bagian Produsen | EPC2012CENGR |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 1nC @ 5V |
Gate Charge (Qg) (Max) @ Vgs | 2.5V @ 1mA |
Fitur FET | N-Channel |
Deskripsi yang Diperluas | N-Channel 200V 5A (Ta) Surface Mount Die Outline (4-Solder Bar) |
Tiriskan untuk Sumber Tegangan (Vdss) | - |
Deskripsi | TRANS GAN 200V 5A BUMPED DIE |
Current - Continuous Drain (Id) @ 25 ° C | 200V |
kapasitansi Ratio | - |