| Nomor bagian : | EPC8010ENGR |
|---|---|
| Pabrikan / Merek : | EPC |
| Deskripsi : | TRANS GAN 100V 2.7A BUMPED DIE |
| Status RoHs : | Memimpin bebas / RoHS Compliant |
| Jumlah yang tersedia | 1834 pcs |
| Lembar data | EPC8010ENGR.pdf |
| Tegangan - Uji | 55pF @ 50V |
| Tegangan - Breakdown | Die |
| Vgs (th) (Max) @ Id | 160 mOhm @ 500mA, 5V |
| Teknologi | GaNFET (Gallium Nitride) |
| Seri | eGaN® |
| Status RoHS | Tray |
| Rds Pada (Max) @ Id, Vgs | 2.7A (Ta) |
| Polarisasi | - |
| Nama lain | 917-EPC8010ENGR EPC8010ENGJ |
| Suhu Operasional | -40°C ~ 150°C (TJ) |
| mount Jenis | Surface Mount |
| Tingkat Sensitivitas Kelembaban (MSL) | 1 (Unlimited) |
| Nomor Bagian Produsen | EPC8010ENGR |
| Kapasitansi Masukan (Ciss) (Max) @ VDS | 0.48nC @ 5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5V @ 250µA |
| Fitur FET | N-Channel |
| Deskripsi yang Diperluas | N-Channel 100V 2.7A (Ta) Surface Mount Die |
| Tiriskan untuk Sumber Tegangan (Vdss) | - |
| Deskripsi | TRANS GAN 100V 2.7A BUMPED DIE |
| Current - Continuous Drain (Id) @ 25 ° C | 100V |
| kapasitansi Ratio | - |
EPC
