Nomor bagian : | FDMD8900 |
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Pabrikan / Merek : | AMI Semiconductor / ON Semiconductor |
Deskripsi : | MOSFET 2N-CH 30V POWER |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 31229 pcs |
Lembar data | FDMD8900.pdf |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Paket Perangkat pemasok | 12-Power3.3x5 |
Seri | - |
Rds Pada (Max) @ Id, Vgs | 4 mOhm @ 19A, 10V |
Listrik - Max | 2.1W |
Pengemasan | Tape & Reel (TR) |
Paket / Case | 12-PowerWDFN |
Nama lain | FDMD8900TR |
Suhu Operasional | -55°C ~ 150°C (TJ) |
mount Jenis | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 39 Weeks |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 2605pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
FET Jenis | 2 N-Channel (Dual) |
Fitur FET | Standard |
Tiriskan untuk Sumber Tegangan (Vdss) | 30V |
Detil Deskripsi | Mosfet Array 2 N-Channel (Dual) 30V 19A, 17A 2.1W Surface Mount 12-Power3.3x5 |
Current - Continuous Drain (Id) @ 25 ° C | 19A, 17A |