Nomor bagian : | FQPF33N10L |
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Pabrikan / Merek : | AMI Semiconductor / ON Semiconductor |
Deskripsi : | MOSFET N-CH 100V 18A TO-220F |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 54527 pcs |
Lembar data | FQPF33N10L.pdf |
Vgs (th) (Max) @ Id | 2V @ 250µA |
Vgs (Max) | ±20V |
Teknologi | MOSFET (Metal Oxide) |
Paket Perangkat pemasok | TO-220F |
Seri | QFET® |
Rds Pada (Max) @ Id, Vgs | 52 mOhm @ 9A, 10V |
Power Disipasi (Max) | 41W (Tc) |
Pengemasan | Tube |
Paket / Case | TO-220-3 Full Pack |
Nama lain | FQPF33N10L-ND FQPF33N10LFS |
Suhu Operasional | -55°C ~ 175°C (TJ) |
mount Jenis | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 5 Weeks |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 1630pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 5V |
FET Jenis | N-Channel |
Fitur FET | - |
Drive Voltage (Max Rds On, Min RDS Aktif) | 5V, 10V |
Tiriskan untuk Sumber Tegangan (Vdss) | 100V |
Detil Deskripsi | N-Channel 100V 18A (Tc) 41W (Tc) Through Hole TO-220F |
Current - Continuous Drain (Id) @ 25 ° C | 18A (Tc) |