Nomor bagian : |
IS61NVP51236-200B3I-TR |
Pabrikan / Merek : |
ISSI (Integrated Silicon Solution, Inc.) |
Deskripsi : |
IC SRAM 18M PARALLEL 165TFBGA |
Status RoHs : |
Berisi timbal / RoHS tidak patuh |
Jumlah yang tersedia |
5160 pcs |
Lembar data |
1.IS61NVP51236-200B3I-TR.pdf2.IS61NVP51236-200B3I-TR.pdf |
Tulis Siklus Waktu - Kata, Halaman |
- |
Tegangan - Pasokan |
2.375 V ~ 2.625 V |
Teknologi |
SRAM - Synchronous |
Paket Perangkat pemasok |
165-TFBGA (13x15) |
Seri |
- |
Pengemasan |
Tape & Reel (TR) |
Paket / Case |
165-LFBGA |
Suhu Operasional |
-40°C ~ 85°C (TA) |
mount Jenis |
Surface Mount |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
memory Type |
Volatile |
Ukuran memori |
18Mb (512K x 36) |
Antarmuka Memori |
Parallel |
Format Memori |
SRAM |
Status Gratis Memimpin / Status RoHS |
Contains lead / RoHS non-compliant |
Detil Deskripsi |
SRAM - Synchronous Memory IC 18Mb (512K x 36) Parallel 200MHz 3.1ns 165-TFBGA (13x15) |
Frekuensi Jam |
200MHz |
Waktu akses |
3.1ns |