| Nomor bagian : | IXFX120N20 |
|---|---|
| Pabrikan / Merek : | IXYS Corporation |
| Deskripsi : | MOSFET N-CH 200V 120A PLUS247 |
| Status RoHs : | Memimpin bebas / RoHS Compliant |
| Jumlah yang tersedia | 2240 pcs |
| Lembar data | IXFX120N20.pdf |
| Vgs (th) (Max) @ Id | 4V @ 8mA |
| Vgs (Max) | ±20V |
| Teknologi | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok | PLUS247™-3 |
| Seri | HiPerFET™ |
| Rds Pada (Max) @ Id, Vgs | 17 mOhm @ 60A, 10V |
| Power Disipasi (Max) | 560W (Tc) |
| Pengemasan | Tube |
| Paket / Case | TO-247-3 |
| Nama lain | IFX120N20 |
| Suhu Operasional | -55°C ~ 150°C (TJ) |
| mount Jenis | Through Hole |
| Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS | 9100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| FET Jenis | N-Channel |
| Fitur FET | - |
| Drive Voltage (Max Rds On, Min RDS Aktif) | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss) | 200V |
| Detil Deskripsi | N-Channel 200V 120A (Tc) 560W (Tc) Through Hole PLUS247™-3 |
| Current - Continuous Drain (Id) @ 25 ° C | 120A (Tc) |
IXYS Corporation
