Nomor bagian : | RFD4N06LSM9A |
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Pabrikan / Merek : | AMI Semiconductor / ON Semiconductor |
Deskripsi : | MOSFET N-CH 60V 4A DPAK |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 4025 pcs |
Lembar data | RFD4N06LSM9A.pdf |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±10V |
Teknologi | MOSFET (Metal Oxide) |
Paket Perangkat pemasok | TO-252AA |
Seri | - |
Rds Pada (Max) @ Id, Vgs | 600 mOhm @ 1A, 5V |
Power Disipasi (Max) | 30W (Tc) |
Pengemasan | Tape & Reel (TR) |
Paket / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Suhu Operasional | -55°C ~ 175°C (TJ) |
mount Jenis | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
FET Jenis | N-Channel |
Fitur FET | - |
Drive Voltage (Max Rds On, Min RDS Aktif) | 5V |
Tiriskan untuk Sumber Tegangan (Vdss) | 60V |
Detil Deskripsi | N-Channel 60V 4A (Tc) 30W (Tc) Surface Mount TO-252AA |
Current - Continuous Drain (Id) @ 25 ° C | 4A (Tc) |