Nomor bagian : |
RN1909FE(TE85L,F) |
Pabrikan / Merek : |
Toshiba Semiconductor and Storage |
Deskripsi : |
TRANS 2NPN PREBIAS 0.1W ES6 |
Status RoHs : |
Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia |
390171 pcs |
Lembar data |
RN1909FE(TE85L,F).pdf |
Tegangan - Kolektor Emitter Breakdown (Max) |
50V |
VCE Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
transistor Jenis |
2 NPN - Pre-Biased (Dual) |
Paket Perangkat pemasok |
ES6 |
Seri |
- |
Resistor - Emitter Base (R2) |
22 kOhms |
Resistor - Base (R1) |
47 kOhms |
Listrik - Max |
100mW |
Pengemasan |
Cut Tape (CT) |
Paket / Case |
SOT-563, SOT-666 |
Nama lain |
RN1909FE(TE85LF)CT |
mount Jenis |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Status Gratis Memimpin / Status RoHS |
Lead free / RoHS Compliant |
Frekuensi - Transisi |
250MHz |
Detil Deskripsi |
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
DC Current Gain (hFE) (Min) @ Ic, VCE |
70 @ 10mA, 5V |
Saat ini - Kolektor cutoff (Max) |
100nA (ICBO) |
Saat ini - Kolektor (Ic) (Max) |
100mA |