Nomor bagian : | SI4922BDY-T1-GE3 |
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Pabrikan / Merek : | Electro-Films (EFI) / Vishay |
Deskripsi : | MOSFET 2N-CH 30V 8A 8-SOIC |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 39052 pcs |
Lembar data | SI4922BDY-T1-GE3.pdf |
Vgs (th) (Max) @ Id | 1.8V @ 250µA |
Paket Perangkat pemasok | 8-SO |
Seri | TrenchFET® |
Rds Pada (Max) @ Id, Vgs | 16 mOhm @ 5A, 10V |
Listrik - Max | 3.1W |
Pengemasan | Tape & Reel (TR) |
Paket / Case | 8-SOIC (0.154", 3.90mm Width) |
Nama lain | SI4922BDY-T1-GE3-ND SI4922BDY-T1-GE3TR |
Suhu Operasional | -55°C ~ 150°C (TJ) |
mount Jenis | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 33 Weeks |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 2070pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
FET Jenis | 2 N-Channel (Dual) |
Fitur FET | Standard |
Tiriskan untuk Sumber Tegangan (Vdss) | 30V |
Detil Deskripsi | Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C | 8A |
Nomor Bagian Dasar | SI4922 |