| Nomor bagian : | SI5513CDC-T1-GE3 |
|---|---|
| Pabrikan / Merek : | Electro-Films (EFI) / Vishay |
| Deskripsi : | MOSFET N/P-CH 20V 4A 1206-8 |
| Status RoHs : | Memimpin bebas / RoHS Compliant |
| Jumlah yang tersedia | 144369 pcs |
| Lembar data | SI5513CDC-T1-GE3.pdf |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA |
| Paket Perangkat pemasok | 1206-8 ChipFET™ |
| Seri | TrenchFET® |
| Rds Pada (Max) @ Id, Vgs | 55 mOhm @ 4.4A, 4.5V |
| Listrik - Max | 3.1W |
| Pengemasan | Tape & Reel (TR) |
| Paket / Case | 8-SMD, Flat Lead |
| Nama lain | SI5513CDC-T1-GE3TR SI5513CDCT1GE3 |
| Suhu Operasional | -55°C ~ 150°C (TJ) |
| mount Jenis | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS | 285pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 5V |
| FET Jenis | N and P-Channel |
| Fitur FET | Logic Level Gate |
| Tiriskan untuk Sumber Tegangan (Vdss) | 20V |
| Detil Deskripsi | Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount 1206-8 ChipFET™ |
| Current - Continuous Drain (Id) @ 25 ° C | 4A, 3.7A |
| Nomor Bagian Dasar | SI5513 |
Electro-Films (EFI) / Vishay
