Nomor bagian : | SI7860ADP-T1-GE3 |
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Pabrikan / Merek : | Electro-Films (EFI) / Vishay |
Deskripsi : | MOSFET N-CH 30V 11A PPAK SO-8 |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 5133 pcs |
Lembar data | SI7860ADP-T1-GE3.pdf |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Vgs (Max) | ±20V |
Teknologi | MOSFET (Metal Oxide) |
Paket Perangkat pemasok | PowerPAK® SO-8 |
Seri | TrenchFET® |
Rds Pada (Max) @ Id, Vgs | 9.5 mOhm @ 16A, 10V |
Power Disipasi (Max) | 1.8W (Ta) |
Pengemasan | Tape & Reel (TR) |
Paket / Case | PowerPAK® SO-8 |
Suhu Operasional | -55°C ~ 150°C (TJ) |
mount Jenis | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
FET Jenis | N-Channel |
Fitur FET | - |
Drive Voltage (Max Rds On, Min RDS Aktif) | 4.5V, 10V |
Tiriskan untuk Sumber Tegangan (Vdss) | 30V |
Detil Deskripsi | N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25 ° C | 11A (Ta) |