| Nomor bagian : | SIHP28N65E-GE3 |
|---|---|
| Pabrikan / Merek : | Electro-Films (EFI) / Vishay |
| Deskripsi : | MOSFET N-CH 650V 29A TO220AB |
| Status RoHs : | |
| Jumlah yang tersedia | 10695 pcs |
| Lembar data | SIHP28N65E-GE3.pdf |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Teknologi | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok | TO-220AB |
| Seri | - |
| Rds Pada (Max) @ Id, Vgs | 112 mOhm @ 14A, 10V |
| Power Disipasi (Max) | 250W (Tc) |
| Pengemasan | Tube |
| Paket / Case | TO-220-3 |
| Suhu Operasional | -55°C ~ 150°C (TJ) |
| mount Jenis | Through Hole |
| Kapasitansi Masukan (Ciss) (Max) @ VDS | 3405pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| FET Jenis | N-Channel |
| Fitur FET | - |
| Drive Voltage (Max Rds On, Min RDS Aktif) | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss) | 650V |
| Detil Deskripsi | N-Channel 650V 29A (Tc) 250W (Tc) Through Hole TO-220AB |
| Current - Continuous Drain (Id) @ 25 ° C | 29A (Tc) |
Electro-Films (EFI) / Vishay
