Nomor bagian : | STD80N6F6 |
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Pabrikan / Merek : | STMicroelectronics |
Deskripsi : | MOSFET N-CH 60V DPAK |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 38586 pcs |
Lembar data | STD80N6F6.pdf |
Vgs (th) (Max) @ Id | 4.5V @ 250µA |
Vgs (Max) | ±20V |
Teknologi | MOSFET (Metal Oxide) |
Paket Perangkat pemasok | DPAK |
Seri | DeepGATE™, STripFET™ VI |
Rds Pada (Max) @ Id, Vgs | 6.5 mOhm @ 40A, 10V |
Power Disipasi (Max) | 120W (Tc) |
Pengemasan | Original-Reel® |
Paket / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Nama lain | 497-13942-6 |
Suhu Operasional | -55°C ~ 175°C (TJ) |
mount Jenis | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 7480pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 122nC @ 10V |
FET Jenis | N-Channel |
Fitur FET | - |
Drive Voltage (Max Rds On, Min RDS Aktif) | 10V |
Tiriskan untuk Sumber Tegangan (Vdss) | 60V |
Detil Deskripsi | N-Channel 60V 80A (Tc) 120W (Tc) Surface Mount DPAK |
Current - Continuous Drain (Id) @ 25 ° C | 80A (Tc) |