Nomor bagian : | STU6N60M2 |
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Pabrikan / Merek : | STMicroelectronics |
Deskripsi : | MOSFET N-CH 600V IPAK |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 51444 pcs |
Lembar data | STU6N60M2.pdf |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±25V |
Teknologi | MOSFET (Metal Oxide) |
Paket Perangkat pemasok | I-PAK |
Seri | MDmesh™ II Plus |
Rds Pada (Max) @ Id, Vgs | 1.2 Ohm @ 2.25A, 10V |
Power Disipasi (Max) | 60W (Tc) |
Pengemasan | Tube |
Paket / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Nama lain | 497-13978-5 STU6N60M2-ND |
Suhu Operasional | -55°C ~ 150°C (TJ) |
mount Jenis | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 232pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 13.5nC @ 10V |
FET Jenis | N-Channel |
Fitur FET | - |
Drive Voltage (Max Rds On, Min RDS Aktif) | 10V |
Tiriskan untuk Sumber Tegangan (Vdss) | 600V |
Detil Deskripsi | N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole I-PAK |
Current - Continuous Drain (Id) @ 25 ° C | 4.5A (Tc) |