| Nomor bagian : | TJ30S06M3L(T6L1,NQ |
|---|---|
| Pabrikan / Merek : | Toshiba Semiconductor and Storage |
| Deskripsi : | MOSFET P-CH 60V 30A DPAK-3 |
| Status RoHs : | Memimpin bebas / RoHS Compliant |
| Jumlah yang tersedia | 43346 pcs |
| Lembar data | 1.TJ30S06M3L(T6L1,NQ.pdf2.TJ30S06M3L(T6L1,NQ.pdf |
| Vgs (th) (Max) @ Id | 3V @ 1mA |
| Vgs (Max) | +10V, -20V |
| Teknologi | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok | DPAK+ |
| Seri | U-MOSVI |
| Rds Pada (Max) @ Id, Vgs | 21.8 mOhm @ 15A, 10V |
| Power Disipasi (Max) | 68W (Tc) |
| Pengemasan | Tape & Reel (TR) |
| Paket / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Nama lain | TJ30S06M3L(T6L1NQ TJ30S06M3LT6L1NQ |
| Suhu Operasional | 175°C (TJ) |
| mount Jenis | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS | 3950pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| FET Jenis | P-Channel |
| Fitur FET | - |
| Drive Voltage (Max Rds On, Min RDS Aktif) | 6V, 10V |
| Tiriskan untuk Sumber Tegangan (Vdss) | 60V |
| Detil Deskripsi | P-Channel 60V 30A (Ta) 68W (Tc) Surface Mount DPAK+ |
| Current - Continuous Drain (Id) @ 25 ° C | 30A (Ta) |
