Nomor bagian : |
EPC2107ENGRT |
Pabrikan / Merek : |
EPC |
Deskripsi : |
TRANS GAN 3N-CH 100V BUMPED DIE |
Status RoHs : |
Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia |
33224 pcs |
Lembar data |
EPC2107ENGRT.pdf |
Vgs (th) (Max) @ Id |
2.5V @ 100µA, 2.5V @ 20µA |
Paket Perangkat pemasok |
9-BGA (1.35x1.35) |
Seri |
eGaN® |
Rds Pada (Max) @ Id, Vgs |
320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
Listrik - Max |
- |
Pengemasan |
Tape & Reel (TR) |
Paket / Case |
9-VFBGA |
Nama lain |
917-EPC2107ENGRTR |
Suhu Operasional |
-40°C ~ 150°C (TJ) |
mount Jenis |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Status Gratis Memimpin / Status RoHS |
Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS |
16pF @ 50V, 7pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
0.16nC @ 5V, 0.044nC @ 5V |
FET Jenis |
3 N-Channel (Half Bridge + Synchronous Bootstrap) |
Fitur FET |
GaNFET (Gallium Nitride) |
Tiriskan untuk Sumber Tegangan (Vdss) |
100V |
Detil Deskripsi |
Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35) |
Current - Continuous Drain (Id) @ 25 ° C |
1.7A, 500mA |