Nomor bagian : | EPC2110 |
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Pabrikan / Merek : | EPC |
Deskripsi : | MOSFET 2NCH 120V 3.4A DIE |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 28253 pcs |
Lembar data | EPC2110.pdf |
Vgs (th) (Max) @ Id | 2.5V @ 700µA |
Paket Perangkat pemasok | Die |
Seri | eGaN® |
Rds Pada (Max) @ Id, Vgs | 60 mOhm @ 4A, 5V |
Listrik - Max | - |
Pengemasan | Cut Tape (CT) |
Paket / Case | Die |
Nama lain | 917-1152-1 |
Suhu Operasional | -40°C ~ 150°C (TJ) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 14 Weeks |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 80pF @ 60V |
Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
FET Jenis | 2 N-Channel (Dual) Common Drain |
Fitur FET | GaNFET (Gallium Nitride) |
Tiriskan untuk Sumber Tegangan (Vdss) | 120V |
Detil Deskripsi | Mosfet Array 2 N-Channel (Dual) Common Drain 120V 3.4A Die |
Current - Continuous Drain (Id) @ 25 ° C | 3.4A |