Nomor bagian : | SCT30N120 |
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Pabrikan / Merek : | STMicroelectronics |
Deskripsi : | MOSFET N-CH 1200V 45A HIP247 |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 1445 pcs |
Lembar data | 1.SCT30N120.pdf2.SCT30N120.pdf3.SCT30N120.pdf |
Vgs (th) (Max) @ Id | 2.6V @ 1mA (Typ) |
Vgs (Max) | +25V, -10V |
Teknologi | SiCFET (Silicon Carbide) |
Paket Perangkat pemasok | HiP247™ |
Seri | - |
Rds Pada (Max) @ Id, Vgs | 100 mOhm @ 20A, 20V |
Power Disipasi (Max) | 270W (Tc) |
Pengemasan | Tube |
Paket / Case | TO-247-3 |
Nama lain | 497-14960 |
Suhu Operasional | -55°C ~ 200°C (TJ) |
mount Jenis | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 1700pF @ 400V |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 20V |
FET Jenis | N-Channel |
Fitur FET | - |
Drive Voltage (Max Rds On, Min RDS Aktif) | 20V |
Tiriskan untuk Sumber Tegangan (Vdss) | 1200V |
Detil Deskripsi | N-Channel 1200V 40A (Tc) 270W (Tc) Through Hole HiP247™ |
Current - Continuous Drain (Id) @ 25 ° C | 40A (Tc) |