Nomor bagian : | SCT3120ALGC11 |
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Pabrikan / Merek : | LAPIS Semiconductor |
Deskripsi : | MOSFET NCH 650V 21A TO247N |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 5101 pcs |
Lembar data | 1.SCT3120ALGC11.pdf2.SCT3120ALGC11.pdf |
Vgs (th) (Max) @ Id | 5.6V @ 3.33mA |
Vgs (Max) | +22V, -4V |
Teknologi | SiCFET (Silicon Carbide) |
Paket Perangkat pemasok | TO-247N |
Seri | - |
Rds Pada (Max) @ Id, Vgs | 156 mOhm @ 6.7A, 18V |
Power Disipasi (Max) | 103W (Tc) |
Pengemasan | Tube |
Paket / Case | TO-247-3 |
Suhu Operasional | 175°C (TJ) |
mount Jenis | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 460pF @ 500V |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 18V |
FET Jenis | N-Channel |
Fitur FET | - |
Drive Voltage (Max Rds On, Min RDS Aktif) | 18V |
Tiriskan untuk Sumber Tegangan (Vdss) | 650V |
Detil Deskripsi | N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N |
Current - Continuous Drain (Id) @ 25 ° C | 21A (Tc) |