Nomor bagian : |
GP2M002A060PG |
Pabrikan / Merek : |
Global Power Technologies Group |
Deskripsi : |
MOSFET N-CH 600V 2A |
Status RoHs : |
Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia |
4849 pcs |
Lembar data |
GP2M002A060PG.pdf |
Vgs (th) (Max) @ Id |
5V @ 250µA |
Vgs (Max) |
±30V |
Teknologi |
MOSFET (Metal Oxide) |
Paket Perangkat pemasok |
I-PAK |
Seri |
- |
Rds Pada (Max) @ Id, Vgs |
4 Ohm @ 1A, 10V |
Power Disipasi (Max) |
52.1W (Tc) |
Pengemasan |
Tape & Reel (TR) |
Paket / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
Suhu Operasional |
-55°C ~ 150°C (TJ) |
mount Jenis |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Status Gratis Memimpin / Status RoHS |
Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS |
360pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
9nC @ 10V |
FET Jenis |
N-Channel |
Fitur FET |
- |
Drive Voltage (Max Rds On, Min RDS Aktif) |
10V |
Tiriskan untuk Sumber Tegangan (Vdss) |
600V |
Detil Deskripsi |
N-Channel 600V 2A (Tc) 52.1W (Tc) Through Hole I-PAK |
Current - Continuous Drain (Id) @ 25 ° C |
2A (Tc) |