| Nomor bagian : | GP2M002A065HG |
|---|---|
| Pabrikan / Merek : | Global Power Technologies Group |
| Deskripsi : | MOSFET N-CH 650V 1.8A TO220 |
| Status RoHs : | Memimpin bebas / RoHS Compliant |
| Jumlah yang tersedia | 5583 pcs |
| Lembar data | GP2M002A065HG.pdf |
| Vgs (th) (Max) @ Id | 5V @ 250µA |
| Vgs (Max) | ±30V |
| Teknologi | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok | TO-220 |
| Seri | - |
| Rds Pada (Max) @ Id, Vgs | 4.6 Ohm @ 900mA, 10V |
| Power Disipasi (Max) | 52W (Tc) |
| Pengemasan | Tape & Reel (TR) |
| Paket / Case | TO-220-3 |
| Suhu Operasional | -55°C ~ 150°C (TJ) |
| mount Jenis | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS | 353pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
| FET Jenis | N-Channel |
| Fitur FET | - |
| Drive Voltage (Max Rds On, Min RDS Aktif) | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss) | 650V |
| Detil Deskripsi | N-Channel 650V 1.8A (Tc) 52W (Tc) Through Hole TO-220 |
| Current - Continuous Drain (Id) @ 25 ° C | 1.8A (Tc) |
Global Power Technologies Group
