Nomor bagian : | GP2M002A065FG |
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Pabrikan / Merek : | Global Power Technologies Group |
Deskripsi : | MOSFET N-CH 650V 1.8A TO220F |
Status RoHs : | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 4441 pcs |
Lembar data | GP2M002A065FG.pdf |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Vgs (Max) | ±30V |
Teknologi | MOSFET (Metal Oxide) |
Paket Perangkat pemasok | TO-220F |
Seri | - |
Rds Pada (Max) @ Id, Vgs | 4.6 Ohm @ 900mA, 10V |
Power Disipasi (Max) | 17.3W (Tc) |
Pengemasan | Tape & Reel (TR) |
Paket / Case | TO-220-3 Full Pack |
Suhu Operasional | -55°C ~ 150°C (TJ) |
mount Jenis | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 353pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
FET Jenis | N-Channel |
Fitur FET | - |
Drive Voltage (Max Rds On, Min RDS Aktif) | 10V |
Tiriskan untuk Sumber Tegangan (Vdss) | 650V |
Detil Deskripsi | N-Channel 650V 1.8A (Tc) 17.3W (Tc) Through Hole TO-220F |
Current - Continuous Drain (Id) @ 25 ° C | 1.8A (Tc) |